Transition radiation measurements with a Si and a GaAs pixel sensor on a Timepix3 chip

DACHS, F., ALOZY, J., BELYAEV, N., BERGMANN, BL., BEUZEKOM, MV., BILLOUD, TRV., BURIAN, P., BROULÍM, P., CAMPBELL, M., CHELKOV, G., CHERRY, M., DORONIN, S., FILIPPOV, K., FUSCO, P., GARGANO, F., HEIJDEN, BVD., HEIJNE, EHN., KONOVALOV, S., CUDIE, XL., LOPARCO, F., MASCAGNA, V., MAZZIOTTA, MN., MEDUNA, L., PERNEGGER, H., PONOMARENKO, D., POSPÍŠIL, S., PREST, M., REMBSER, C., ROMANIOUK, A., SAVCHENKO, AA., SCHAEFER, D., SCHIOPPA, EJ., SERGEEVA, D., SHCHUKIN, D., SHULGA, E., SMIRNOV, S., SMIRNOV, Y., SMOLYANSKIY, P., SOLDANI, M., SPINELLI, P., STRIKHANOV, M., TETERIN, P., TIKHOMIROV, V., TISHCHENKO, A., VALLAZZA, E., VOROBEV, K., ZHUKOV, K. Transition radiation measurements with a Si and a GaAs pixel sensor on a Timepix3 chip. Nuclear Instruments and Methods in Physics Research, A, 2020, roč. 958, č. 1. April 2020, s. 1-4. ISSN 0168-9002.