Role of antisite disorder, electron-electron correlations, and a surface valence transition in the electronic structure of CeMnNi4

dc.contributor.authorSadhukhan, Pampa
dc.contributor.authorDsouza, Sunil Wilfred
dc.contributor.authorSingh, Vipin Kumar
dc.contributor.authorDhaka, Rajendra Singh
dc.contributor.authorGloskovskii, Andrei
dc.contributor.authorDhar, Sudesh Kumar
dc.contributor.authorRaychaudhuri, Pratap
dc.contributor.authorChainani, Ashish
dc.contributor.authorChakrabarti, Aparna
dc.contributor.authorBarman, Sudipta Roy
dc.date.accessioned2021-12-13T11:00:19Z
dc.date.available2021-12-13T11:00:19Z
dc.date.issued2019
dc.description.abstract-translatedCeMnNi4 exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3d (U-Ni) and Mn 3d (U-mn) electrons in explaining the valence band of this multiply correlated material. We show that Mn-Ni antisite disorder as well as U Ni play a crucial role in enhancing its spin polarization: Antisite disorder broadens a Ni 3d minority-spin peak close to the Fermi level (E-F), while an increase in U-Ni shifts it toward E-F, both leading to a significant increase of minority-spin states at E-F. Furthermore, the rare occurrence of a valence state transition between the bulk and the surface is demonstrated highlighting the importance of HAXPES in resolving the electronic structure of materials unhindered by surface effects.en
dc.format10 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citationSADHUKHAN, P. DSOUZA, SW. SINGH, VK. DHAKA, RS. GLOSKOVSKII, A. DHAR, SK. RAYCHAUDHURI, P. CHAINANI, A. CHAKRABARTI, A. BARMAN, SR. Role of antisite disorder, electron-electron correlations, and a surface valence transition in the electronic structure of CeMnNi4. Physical Review B, 2019, roč. 99, č. 3, s. nestránkováno. ISSN: 2469-9950cs
dc.identifier.document-number454766400002
dc.identifier.doi10.1103/PhysRevB.99.035102
dc.identifier.issn2469-9950
dc.identifier.obd43933221
dc.identifier.uri2-s2.0-85059910848
dc.identifier.urihttp://hdl.handle.net/11025/46316
dc.language.isoenen
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
dc.publisherAmerican Physical Societyen
dc.relation.ispartofseriesPhysical Review Ben
dc.rightsPlný text není přístupný.cs
dc.rights© American Physical Societyen
dc.rights.accessclosedAccessen
dc.subject.translatedphotoemissionen
dc.subject.translatedCEen
dc.subject.translatedstateen
dc.subject.translatedXPSen
dc.titleRole of antisite disorder, electron-electron correlations, and a surface valence transition in the electronic structure of CeMnNi4en
dc.typečlánekcs
dc.typearticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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