Parameter calculations for SiC three-phase rectifier
| dc.contributor.author | Očenášek, Jiří | |
| dc.date.accessioned | 2022-02-07T11:00:12Z | |
| dc.date.available | 2022-02-07T11:00:12Z | |
| dc.date.issued | 2021 | |
| dc.description.abstract-translated | Main focus of this work is to design a three–phase rectifier based on silicon–carbide power diodes. Main part of the article is dedicated do equations which are then used to obtain temperatures of power diode junction based on current, voltage and switching frequency. From these, power losses are calculated. Combined with selection of cooling heat sink, final temperatures are obtained. There were two methods used. One simplified equation, neglecting shape of forward current to calculate forward losses and the second where the shape of current is acknowledged and calculated with. Final values are then reviewed via simulation. | en |
| dc.format | 4 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | OČENÁŠEK, J. Parameter calculations for SiC three-phase rectifier. In International Conference on Applied Electronics (AE 2021) : /proceedings/. Pilsen: University of West Bohemia, 2021. s. 115-118. ISBN: 978-80-261-0972-3 , ISSN: 1803-7232 | cs |
| dc.identifier.doi | 10.23919/AE51540.2021.9542880 | |
| dc.identifier.isbn | 978-80-261-0972-3 | |
| dc.identifier.issn | 1803-7232 | |
| dc.identifier.obd | 43933625 | |
| dc.identifier.uri | 2-s2.0-85116438819 | |
| dc.identifier.uri | http://hdl.handle.net/11025/46745 | |
| dc.language.iso | en | en |
| dc.project.ID | EF18_069/0009855/Elektrotechnické technologie s vysokým podílem vestavěné inteligence | cs |
| dc.project.ID | SGS-2021-021/Výzkum a vývoj perspektivních technologií v elektrických pohonech a strojích IV | cs |
| dc.publisher | University of West Bohemia | en |
| dc.relation.ispartofseries | International Conference on Applied Electronics (AE 2021) : /proceedings/ | en |
| dc.rights | © University of West Bohemia | en |
| dc.rights.access | openAccess | en |
| dc.subject.translated | rectifier | en |
| dc.subject.translated | silicon | en |
| dc.subject.translated | carbide | en |
| dc.subject.translated | power | en |
| dc.subject.translated | Schottky | en |
| dc.subject.translated | diode | en |
| dc.title | Parameter calculations for SiC three-phase rectifier | en |
| dc.type | konferenční příspěvek | cs |
| dc.type | ConferenceObject | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |