Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs

dc.contributor.authorAbd, Ahmed N.
dc.contributor.authorHabubi, Nadir Fadhil
dc.contributor.authorAl-Jaary, Ali H. Reshak
dc.contributor.authorMansour, Hazim Louis
dc.date.accessioned2019-03-04T11:50:40Z
dc.date.available2019-03-04T11:50:40Z
dc.date.issued2018
dc.description.abstract-translatedIn the present work, multiwall carbon nanotubes (MWCNTs) layers dispersed in DMF and citric acid deposited by drop casting on porous silicon (PSi) photodetector have been prepared by electrochemical etching (ECE) process at 25 mA/cm(2) for 20 min. X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transformation infrared spectroscopy (FTIR), energy dispersive X-ray (EDX), current-voltage (I-V) characteristics, capacitance-voltage(C-V) characteristics, spectral responsivity (R.) and specific detectivity (D*) before and after depositing MWCNTs layers were investigated. It was found that, the On/Off ratio was increased after depositing MWCNTs, while ideality factor and built in potential were decreased and this fact indicates that Al/PSi/c-Si/Al photodetector was nearly approaching the ideal diode characteristic after deposition process. Significant enhancement in spectral responsivity and specific detectivity were also noticed after depositing MWCNTs on porous matrix.en
dc.format8 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citationABD, A. N., HABUBI, N. F., AL-JAARY, A. H. R., MANSOUR, H. L. Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs. International Journal of Nanoelectronics and Materials, 2018, roč. 11, č. 3, s. 241-248. ISSN 1985-5761.en
dc.identifier.document-number438872700001
dc.identifier.issn1985-5761
dc.identifier.obd43925208
dc.identifier.uri2-s2.0-85050335470
dc.identifier.urihttp://hdl.handle.net/11025/31200
dc.language.isoenen
dc.publisherUniversiti Malaysia Perlisen
dc.rightsPlný text není přístupný.cs
dc.rights© Universiti Malaysia Perlisen
dc.rights.accessclosedAccessen
dc.subject.translatedMWCNTsen
dc.subject.translatedPSien
dc.subject.translatedECEen
dc.subject.translatedElectrical Propertiesen
dc.subject.translatedPhotodetectoren
dc.titleEnhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTsen
dc.typečlánekcs
dc.typearticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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