Investigation of parameters of new MAPD-3NM silicon photomultipliers

dc.contributor.authorAhmadov, F.
dc.contributor.authorAhmadov, G.
dc.contributor.authorAkbarov, R.
dc.contributor.authorAktag, A.
dc.contributor.authorBudak, E.
dc.contributor.authorDoganci, E.
dc.contributor.authorGurer, U.
dc.contributor.authorHolík, Michael
dc.contributor.authorKahraman, Aysegul
dc.contributor.authorKaracali, Huseyin
dc.contributor.authorLyubchyk, S.
dc.contributor.authorLyubchyk, A.
dc.contributor.authorLyubchyk, Sergiy I.
dc.contributor.authorMammadli, A.
dc.contributor.authorMamedov, F.
dc.contributor.authorNuruyev, S.
dc.contributor.authorPřidal, Petr
dc.contributor.authorSadigov, A.
dc.contributor.authorSadygov, Z.
dc.contributor.authorUrban, Ondřej
dc.contributor.authorYilmaz, E.
dc.contributor.authorYilmaz, O.
dc.contributor.authorZich, Jan
dc.date.accessioned2022-05-30T10:00:13Z
dc.date.available2022-05-30T10:00:13Z
dc.date.issued2022
dc.description.abstract-translatedIn the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIGMAPD is used to measure the parameters of theMAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developedMAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.en
dc.format9 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citationAHMADOV, F. AHMADOV, G. AKBAROV, R. AKTAG, A. BUDAK, E. DOGANCI, E. GURER, U. HOLÍK, M. KAHRAMAN, A. KARACALI, H. LYUBCHYK, S. LYUBCHYK, A. LYUBCHYK, SI. MAMMADLI, A. MAMEDOV, F. NURUYEV, S. PŘIDAL, P. SADIGOV, A. SADYGOV, Z. URBAN, O. YILMAZ, E. YILMAZ, O. ZICH, J. Investigation of parameters of new MAPD-3NM silicon photomultipliers. Journal of Instrumentation, 2022, roč. 17, č. 1, s. 1-9. ISSN: 1748-0221cs
dc.identifier.document-number757419300012
dc.identifier.doi10.1088/1748-0221/17/01/C01001
dc.identifier.issn1748-0221
dc.identifier.obd43934882
dc.identifier.uri2-s2.0-85125520881
dc.identifier.urihttp://hdl.handle.net/11025/47640
dc.language.isoenen
dc.project.IDEF16_019/0000766/Inženýrské aplikace fyziky mikrosvětacs
dc.project.IDLTT17018/Získávání nových poznatků o mikrosvětě v infrastruktuře CERNcs
dc.publisherIOP Publishingen
dc.relation.ispartofseriesJournal of Instrumentationen
dc.rightsPlný text je přístupný v rámci univerzity přihlášeným uživatelům.cs
dc.rights© IOP Publishingen
dc.rights.accessrestrictedAccessen
dc.subject.translatedgamma detectorsen
dc.subject.translatedphoton detectors for UVen
dc.subject.translatedvisible and IR photons (solid-state)en
dc.subject.translated(PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.)en
dc.subject.translatedspectrometersen
dc.subject.translatedphoton detectors for UVen
dc.subject.translatedvisible and IR photons (gas) (gas-photocathodesen
dc.titleInvestigation of parameters of new MAPD-3NM silicon photomultipliersen
dc.typečlánekcs
dc.typearticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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