High-frequency full-bridge LLC resonant inverter with GaN HEMT
| dc.contributor.author | Krýsl, Pavel | |
| dc.contributor.author | Jára, Martin | |
| dc.contributor.author | Peroutka, Zdeněk | |
| dc.date.accessioned | 2023-02-06T11:00:20Z | |
| dc.date.available | 2023-02-06T11:00:20Z | |
| dc.date.issued | 2022 | |
| dc.description.abstract-translated | In this paper, the development of a compact LLC resonant converter based on GaN devices and with output power up to 10 kW is described. The capability of 1 MHz operation contributes to small overall dimensions involving the power stage, drivers and also the control system. The characteristics of the power switches, consisting of three GaN transistors in parallel placed on an insulated metal substrate (IMS), are provided together with their double pulse test performance. High-frequency operations in resonant mode up to 10kW are demonstrated. Converter construction based on sandwich structure and overall mechanical assembly are detailed as well. | en |
| dc.format | 4 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | KRÝSL, P. JÁRA, M. PEROUTKA, Z. High-frequency full-bridge LLC resonant inverter with GaN HEMT. In Proceedings of the 2022 20th International Conference on Mechatronics - Mechatronika, ME 2022. Piscataway: IEEE, 2022. s. 126-129. ISBN: 978-1-66541-040-3 | cs |
| dc.identifier.doi | 10.1109/ME54704.2022.9982816 | |
| dc.identifier.isbn | 978-1-66541-040-3 | |
| dc.identifier.obd | 43937892 | |
| dc.identifier.uri | 2-s2.0-85146330078 | |
| dc.identifier.uri | http://hdl.handle.net/11025/51310 | |
| dc.language.iso | en | en |
| dc.project.ID | TN01000026/Národní centrum kompetence Josefa Božka (JOBNAC) | cs |
| dc.publisher | IEEE | en |
| dc.relation.ispartofseries | Proceedings of the 2022 20th International Conference on Mechatronics - Mechatronika, ME 2022 | en |
| dc.rights | Plný text je přístupný v rámci univerzity přihlášeným uživatelům. | cs |
| dc.rights | © IEEE | en |
| dc.rights.access | restrictedAccess | en |
| dc.subject.translated | GaN | en |
| dc.subject.translated | high-switching frequency | en |
| dc.subject.translated | efficiency | en |
| dc.subject.translated | compact converter | en |
| dc.subject.translated | LLC | en |
| dc.title | High-frequency full-bridge LLC resonant inverter with GaN HEMT | en |
| dc.type | konferenční příspěvek | cs |
| dc.type | ConferenceObject | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |
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