Raman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structures

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dc.contributor.authorKadlečíková, M.
dc.contributor.authorVančo, Ĺ
dc.contributor.authorBreza, J.
dc.contributor.authorPriesol, J.
dc.contributor.authorŠatka, A.
dc.contributor.editorPihera, Josef
dc.contributor.editorSteiner, František
dc.date.accessioned2019-02-21T12:47:35Z
dc.date.available2019-02-21T12:47:35Z
dc.date.issued2018
dc.description.abstract-translatedIn this experimental work we examined the temperature and mechanical stress in the thin films of microelectronic structures based on GaN and AlN by Raman spectroscopy. The rise in temperature in the Raman spectrum is shown by shifting the Raman bands toward lower wavenumbers. Similarly like with changes of temperature, the changes of the positions of Raman bands may indicate the changes of mechanical stress in the structure. It was confirmed experimentally that in the case of tensile stress the Raman bands are shifted towards lower wavenumbers, and under compressive stress to higher wavenumbers.en
dc.description.sponsorshipWe are grateful to the scientific grant agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic for financial support of project VEGA No. 1/0947/16.en
dc.format2 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citationElectroscope. 2018, č. 1.cs
dc.identifier.issn1802-4564
dc.identifier.urihttp://hdl.handle.net/11025/31008
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plzni, Fakulta elektrotechnickács
dc.relation.ispartofseriesElectroscopecs
dc.rightsCopyright © 2018 Electroscope. All Rights Reserved.en
dc.rights.accessopenAccessen
dc.subjectRamanova spektroskopiecs
dc.subjectmikroelektronické strukturycs
dc.subjecttenké vrstvycs
dc.subjectzkoušení materiálucs
dc.subject.translatedRaman spectroscopyen
dc.subject.translatedmicroelectronic structuresen
dc.subject.translatedthin filmsen
dc.subject.translatedmaterial testingen
dc.titleRaman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structuresen
dc.typečlánekcs
dc.typearticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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