Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors
dc.contributor.author | Kobayashi, Masaki | |
dc.contributor.author | Anh, Le Duc | |
dc.contributor.author | Minár, Jan | |
dc.contributor.author | Khan, Walayat | |
dc.contributor.author | Borek, Stephan | |
dc.contributor.author | Hai, Pham Nam | |
dc.contributor.author | Harada, Yoshihisa | |
dc.contributor.author | Schmitt, Thorsten | |
dc.contributor.author | Oshima, Masaharu | |
dc.contributor.author | Fujimori, Atsushi | |
dc.contributor.author | Tanaka, Masaaki | |
dc.contributor.author | Strocov, Vladimir N. | |
dc.date.accessioned | 2021-09-06T10:00:28Z | |
dc.date.available | 2021-09-06T10:00:28Z | |
dc.date.issued | 2021 | |
dc.description.abstract-translated | Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials. | en |
dc.format | 10 s. | cs |
dc.format.mimetype | application/pdf | |
dc.identifier.citation | KOBAYASHI, M., ANH, LD., MINÁR, J., KHAN, W., BOREK, S., HAI, PN., HARADA, Y., SCHMITT, T., OSHIMA, M., FUJIMORI, A., TANAKA, M. ,STROCOV, VN. Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors. Physical Review B, 2021, roč. 103, č. 11. ISSN 2469-9950. | cs |
dc.identifier.document-number | 627559500001 | |
dc.identifier.doi | 10.1103/PhysRevB.103.115111 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.obd | 43933209 | |
dc.identifier.uri | 2-s2.0-85102697943 | |
dc.identifier.uri | http://hdl.handle.net/11025/45057 | |
dc.language.iso | en | en |
dc.project.ID | EF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami | cs |
dc.publisher | American Physical Society | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.rights | © American Physical Society | en |
dc.rights.access | openAccess | en |
dc.subject.translated | ferromagnetic semiconductors | en |
dc.subject.translated | SX-ARPES | en |
dc.subject.translated | electronic structure | en |
dc.subject.translated | FMS materials | en |
dc.subject.translated | spintronics | en |
dc.title | Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors | en |
dc.type | článek | cs |
dc.type | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |