Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs

dc.contributor.authorAhmadov, F.
dc.contributor.authorMammadli, A.
dc.contributor.authorSadygov, A.
dc.contributor.authorBerikov, D.
dc.contributor.authorAhmadov, G.
dc.contributor.authorHolík, Michael
dc.contributor.authorNuruyev, S.
dc.contributor.authorSadygov, Z.
dc.contributor.authorMamadov, F.
dc.date.accessioned2025-06-20T08:41:06Z
dc.date.available2025-06-20T08:41:06Z
dc.date.issued2025
dc.date.updated2025-06-20T08:41:06Z
dc.description.abstractIn this paper, we investigate the physical properties of the MPPC-S12572-10P and MAPD-3NK silicon photomultipliers (SiPMs) operating in Geiger mode with both deep-buried pixels and surface pixel structure under the influence of gamma radiation with an average energy of 1.25 MeV. Both types of photodiodes were irradiated with doses of 10 kGy, 40 kGy and 100 kGy. Changes in the dark current, capacitance, photosignal amplitude and operating voltage of the irradiated photodiodes were studied.en
dc.format6
dc.identifier.document-number001459348200001
dc.identifier.doi10.1016/j.radmeas.2025.107422
dc.identifier.issn1350-4487
dc.identifier.obd43946516
dc.identifier.orcidHolík, Michael 0000-0003-1734-4507
dc.identifier.urihttp://hdl.handle.net/11025/60695
dc.language.isoen
dc.relation.ispartofseriesRadiation Measurements
dc.rights.accessC
dc.subjectmicropixel avalanche photodiodeen
dc.subjectSiPMen
dc.subjectlastic scintillatoren
dc.subjectgamma sourceen
dc.titleInvestigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMsen
dc.typeČlánek v databázi WoS (Jimp)
dc.typeČLÁNEK
dc.type.statusPublished Version
local.files.count1*
local.files.size3538916*
local.has.filesyes*
local.identifier.eid2-s2.0-105001025209

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