Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs

Abstract

In this paper, we investigate the physical properties of the MPPC-S12572-10P and MAPD-3NK silicon photomultipliers (SiPMs) operating in Geiger mode with both deep-buried pixels and surface pixel structure under the influence of gamma radiation with an average energy of 1.25 MeV. Both types of photodiodes were irradiated with doses of 10 kGy, 40 kGy and 100 kGy. Changes in the dark current, capacitance, photosignal amplitude and operating voltage of the irradiated photodiodes were studied.