Electronic structure of Bi nanolines on InAs(100)

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dc.contributor.authorNafday, Dhani
dc.contributor.authorRichter, Christine
dc.contributor.authorHeckmann, Olivier
dc.contributor.authorWang, Weimin
dc.contributor.authorMariot, Jean-Michel
dc.contributor.authorDjukic, Uros
dc.contributor.authorVobornik, Ivana
dc.contributor.authorLefevre, Patrick
dc.contributor.authorTaleb-Ibrahimi, Amina
dc.contributor.authorBertran, Franco̧is
dc.contributor.authorRault, Julien
dc.contributor.authorNicolai, Laurent Christophe
dc.contributor.authorOng, Chin Shen
dc.contributor.authorThunström, Patrik
dc.contributor.authorHricovini, Karol
dc.contributor.authorMinár, Jan
dc.contributor.authorDi Marco, Igor
dc.date.accessioned2023-09-04T10:00:24Z
dc.date.available2023-09-04T10:00:24Z
dc.date.issued2023
dc.description.abstract-translatedSelf-assembled nanolines are attractive to build the technological devices of next generation, but characterizing their electronic properties is often difficult to achieve. In this work we employ angle-resolved photoemission spectroscopy and density functional theory to clarify the electronic structure exhibited by self-assembled Bi nanolines grown on the InAs(100) surface. A surface resonance associated to the reconstructed ζ(4 × 2) surface is visible in the photoemission spectra before and after the formation of the Bi nanolines. This demonstrates that Bi deposition does not necessarily drive a transition to an unreconstructed surface in the substrate, which is contrary to what was reported in previous studies. In addition, experiment and theory show the presence of a flat band located in the band gap of InAs, just above the valence band maximum. This flat band is associated to the Bi nanolines and possesses a strong orbital character, consistent with its unidimensional nature. These spectral features suggest that Bi nanolines on InAs(100) may have a strongly polarized conductivity, which makes them suitable to be exploited as nanowires in nanotechnology. The coexistence with an accumulation layer suggests an even farther functionalization.en
dc.format
dc.format8 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citationNAFDAY, D. RICHTER, CH. HECKMANN, O. WANG, W. MARIOT, J. DJUKIC, U. VOBORNIK, I. LEFEVRE, P. TALEB-IBRAHIMI, A. BERTRAN, F. RAULT, J. NICOLAI, LCH. ONG, CHS. THUNSTRÖM, P. HRICOVINI, K. MINÁR, J. DI MARCO, I. Electronic structure of Bi nanolines on InAs(100). APPLIED SURFACE SCIENCE, 2023, roč. 611, č. FEB 15 2023, s. nestránkováno. ISSN: 0169-4332cs
dc.identifier.document-number906886000001
dc.identifier.doi10.1016/j.apsusc.2022.155436
dc.identifier.issn0169-4332
dc.identifier.obd43940066
dc.identifier.uri2-s2.0-85141749528
dc.identifier.urihttp://hdl.handle.net/11025/53903
dc.language.iso
dc.language.isoenen
dc.project.IDEF15_003/0000358/Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitamics
dc.publisherElsevieren
dc.relation.ispartofseriesApplied Surface Scienceen
dc.rights© The Author(s)en
dc.rights.accessopenAccessen
dc.subject.translatedelectronic band structureen
dc.subject.translatedsurface statesen
dc.subject.translatedphotoemsissionen
dc.subject.translatedthin filmen
dc.subject.translatedreconstructed surfaceen
dc.titleElectronic structure of Bi nanolines on InAs(100)en
dc.typečlánekcs
dc.typearticleen
dc.type.status
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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