Oxidation of sputtered Cu films during thermal annealing in flowing air
Date issued
2007
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Plasma Physics AS CR
Abstract
The article deals with oxidation of Cu films during post-deposition thermal annealing in flowing air. Cu films were sputtered from a pure Cu target in Ar using dc unbalanced magnetron. The copper oxide films formed during post-deposition thermal annealing were compared with CuOx films sputtered from Cu target in the mixture of Ar and O2. The oxidation behavior of the films was characterized by high-temperature thermogravimetry and X-ray diffraction (XRD). Thermal annealing was carried out in a wide range of temperatures from 300 to 1300°C. It was found that the CuO oxide decomposes into Cu2O+O at ~1040° C.
Description
Subject(s)
tenké vrstvy, magnetronové naprašování, termogravimetrie, měď, oxidace
Citation
XXVIII International conference on phenomena in ionized gases: July 15-20, 2007, Prague, Czech Republic: proceedings. Praha: Institute of Plasma Physics AS CR, 2007, p. 711-712.