GaN Based Inverter Current-Collapse Loss Decrease Using 5-segment Modulation

dc.contributor.authorSkarolek, Pavel
dc.contributor.authorLettl, Jiří
dc.contributor.editorPinker, Jiří
dc.date.accessioned2022-11-04T09:35:06Z
dc.date.available2022-11-04T09:35:06Z
dc.date.issued2022
dc.description.abstract-translatedThe current collapse phenomenon increases conduction losses in high electron mobility transistors. This paper presents a simple option to decrease these losses in 3 phase hard-switching inverter driving permanent magnet synchronous motor utilizing 5-segment SVPWM modulation. Converter DC-link input power decrease by 2 % was observed compared to classic 7-segment modulation. This decrease results in significant decrease of transistor operating temperature.en
dc.description.sponsorshipSGS20/164/OHK3/3T/13cs
dc.format5 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citation2022 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2022, Czech Republic, p. 147-152.en
dc.identifier.isbn978-1-6654-9482-3
dc.identifier.urihttp://hdl.handle.net/11025/49870
dc.language.isoenen
dc.publisherFakulta elektrotechnická ZČUcs
dc.rights© IEEEen
dc.rights.accessopenAccessen
dc.subjectGaNcs
dc.subjectproud-kolapscs
dc.subject3-fázový měničcs
dc.subjectPMSMcs
dc.subject.translatedGaNen
dc.subject.translatedcurrent-collapseen
dc.subject.translated3-phase inverteren
dc.subject.translatedPMSMen
dc.titleGaN Based Inverter Current-Collapse Loss Decrease Using 5-segment Modulationen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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