Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data
Date issued
2022
Journal Title
Journal ISSN
Volume Title
Publisher
Fakulta elektrotechnická ZČU
Abstract
Description
Subject(s)
technologie BCD, tranzistory MOS, efektivní prahové napětí, obdélníkové rozvržení, diamantový tvar
Citation
2022 International Conference on Applied Electronics: Pilsen, 6th – 7th September 2022, Czech Republic, p. 33-38.