Detector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistors

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dc.contributor.authorYermolaev, Denis Mikhailovich
dc.contributor.authorKhmyrova, Irina
dc.contributor.authorPolushkin, Evgeny
dc.contributor.authorKovalchuk, Anatoly
dc.contributor.authorGavrilenko, Vladimir
dc.contributor.authorMaremyanin, Kirill
dc.contributor.authorMaleev, Nikolai
dc.contributor.authorUstinov, Victor
dc.contributor.authorZemlyakov, Valeriy
dc.contributor.authorBespalov, Vladimir Alexandrovič
dc.contributor.authorEgorkin, Vladimir
dc.contributor.authorPopov, Viacheslav
dc.contributor.authorShapoval, Sergei
dc.contributor.editorPinker, Jiří
dc.date.accessioned2019-10-17T06:09:07Z
dc.date.available2019-10-17T06:09:07Z
dc.date.issued2017
dc.description.abstract-translatedPerformance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.en
dc.format4 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citation2017 International Conference on Applied Electronics: Pilsen, 5th – 6th September 2017, Czech Republic, p.279-282.en
dc.identifier.isbn978–80–261–0641–8 (Print)
dc.identifier.isbn978–80–261–0642–5 (Online)
dc.identifier.issn1803–7232 (Print)
dc.identifier.issn1805–9597 (Online)
dc.identifier.urihttp://hdl.handle.net/11025/35453
dc.language.isoenen
dc.publisherZápadočeská univerzita v Plznics
dc.rights© Západočeská univerzita v Plznics
dc.rights.accessopenAccessen
dc.subjectpole FETcs
dc.subjectterahertzové zářenícs
dc.subjectplazmatické vlnycs
dc.subjectplovoucí elektrodacs
dc.subject.translatedFET arrayen
dc.subject.translatedterahertz radiationen
dc.subject.translatedplasma wavesen
dc.subject.translatedfloating electrodeen
dc.titleDetector for terahertz applications based on a serpentine array of integrated GaAs/InGaAs/AlGaAs-field-effect transistorsen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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