Two-dimensional to bulk crossover of the WSe2 electronic band structure

Abstract

Transition metal dichalcogenides (TMDs) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit.Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of large area epitaxial WSe2 thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green’s function calculation.

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Subject(s)

transition metal dichalcogenides, 2D-materials, ARPES, molecular beam epitaxy

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