Dielectric Analysis of Silicone Gels

Abstract

Given the dynamic development of power electronics and semiconductors, it's essential to innovate materials capable of withstanding high electric field intensities and partial discharges. Silicone gels are part of a group of potting compounds used as the main insulation system for power devices. Due to the continuous development of power devices and increasing levels of operating voltages, issues arise concerning partial discharges at the interface substrate-gel-conductor. This interface is well known as the triple point, where a significant increase in electric field intensity occurs. This paper presents a structural analysis of silicone gel commonly used as the main insulation in these applications to observe structural changes and dielectric properties.