The influence of TiW and Ti-TiN interface layers on power transistor parameters
| dc.contributor.author | Áč, Vladimír | |
| dc.contributor.author | Sumega, Miroslav | |
| dc.contributor.editor | Pihera, Josef | |
| dc.contributor.editor | Steiner, František | |
| dc.date.accessioned | 2012-10-17T12:16:22Z | |
| dc.date.available | 2012-10-17T12:16:22Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract-translated | The power MOS transistors were tested with different diffusion barrier type used in metallization contact stack. The contact structure in integrated circuit (IC) needs to have good ohmic properties with low contact resistance and it needs to be thermodynamically stable to prevent contact degradation. Because high current operation the power transistors in IC should be most sensitive parts for barrier stability testing. The PtSi-TiW-AlCu metallization technology will by compared with PtSi-Ti-TiN-AlCu metallization. Generally, the TiW diffusion barrier has lower thermodynamic stability with AlCu metallization compare to TiN. Therefore a Ti-TiN barrier implementation could be attractive for manufacturing using TiW barrier technology. It will be interesting to test the RON (transistor resistance in switch ON state), gate threshold voltage and leakage current parameters on power MOS transistors because the barrier changes. The barrier and aluminium-copper interface will be compared on the SEM cross-sections samples. | en |
| dc.format | 4 s. | cs |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Electroscope, 2009, Konference EDS 2009. | cs |
| dc.identifier.issn | 1802-4564 | |
| dc.identifier.uri | http://hdl.handle.net/11025/549 | |
| dc.language.iso | en | en |
| dc.publisher | Západočeská univerzita v Plzni, Fakulta elektrotechnická | cs |
| dc.relation.ispartofseries | Electroscope | cs |
| dc.rights | Copyright © 2007-2010 Electroscope. All Rights Reserved. | en |
| dc.rights.access | openAccess | en |
| dc.subject | výkonové tranzistory | cs |
| dc.subject | pokovování | cs |
| dc.subject | TiW | cs |
| dc.subject | Ti-TiN | cs |
| dc.subject | elektrotechnická diagnostika | cs |
| dc.subject.translated | power transistors | en |
| dc.subject.translated | metallization | en |
| dc.subject.translated | electrical diagnostics | en |
| dc.subject.translated | TiW | en |
| dc.subject.translated | Ti-TiN | en |
| dc.title | The influence of TiW and Ti-TiN interface layers on power transistor parameters | en |
| dc.type | článek | cs |
| dc.type | article | en |
| dc.type | konferenční příspěvek | cs |
| dc.type | conferenceObject | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |