Finding multiple DC operating points of MOS circuits fabricated in submicrometer technology

Abstract

The paper is focused on the analysis of circuits containing MOS transistors fabricated in submicrometer technology, having multiple DC operating points. The transistors are characterized by intricate models BSIM 3 and BSIM 4. To find the operating points an algorithm is proposed, based on the homotopy concept and the simplicial method. The algorithm is capable of finding multiple DC operating points but it does not guarantee finding all of them. For illustration a numerical example is given.