Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

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dc.contributor.authorAhmadov, F.
dc.contributor.authorAhmadov, G.
dc.contributor.authorMammadli, A.
dc.contributor.authorSadygov, A.
dc.contributor.authorSadygov, Z.
dc.contributor.authorJazbec, A.
dc.contributor.authorAmbrožič, K.
dc.contributor.authorHolík, Michael
dc.contributor.authorAkbarov, R.
dc.contributor.authorNuruyev, S.
dc.contributor.authorMamadov, F.
dc.contributor.authorOkhrimenko, O.
dc.contributor.authorShitov, Yu.
dc.contributor.authorBacherikov, Yu.
dc.date.accessioned2026-05-05T18:05:53Z
dc.date.available2026-05-05T18:05:53Z
dc.date.issued2025
dc.date.updated2026-05-05T18:05:52Z
dc.description.abstractThe radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 × 109to 3.6 × 1012neq/cm². Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.en
dc.format12
dc.identifier.document-number001620594700032
dc.identifier.doi10.1038/s41598-025-24759-1
dc.identifier.issn2045-2322
dc.identifier.obd43948490
dc.identifier.orcidHolík, Michael 0000-0003-1734-4507
dc.identifier.urihttp://hdl.handle.net/11025/67991
dc.language.isoen
dc.relation.ispartofseriesScientific Reports
dc.rights.accessA
dc.subjectradiation harnessen
dc.subjectradiation damageen
dc.subjectneutron radiationen
dc.subjectMAPDen
dc.subjectSiPMen
dc.subjectsensoren
dc.subjectsilicon photomultiplieren
dc.titleStudy of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliersen
dc.typeČlánek v databázi WoS (Jimp)
dc.typeČLÁNEK
dc.type.statusPublished Version
local.files.count1*
local.files.size2989208*
local.has.filesyes*
local.identifier.eid2-s2.0-105022521990

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