GaN Based Inverter Current-Collapse Behavior with Switching Frequency and Blocking Voltage

dc.contributor.authorSkarolek, Pavel
dc.contributor.authorFrolov, Filipp
dc.contributor.authorLettl, Jiří
dc.contributor.editorPinker, Jiří
dc.date.accessioned2021-10-29T06:43:36Z
dc.date.available2021-10-29T06:43:36Z
dc.date.issued2021
dc.description.abstract-translatedCurrent collapse in gallium nitridebased transistors limittheir use in high powerand high frequencyconverters. In some cases, it makes the conduction losses to double. This paper investigates the measurement of dynamic on-state resistance for various cases such as blocking voltage and switching frequency. The optimum minimal length of pulses wasdetermined in the case of three phase inverterto minimize the influence of current collapse.en
dc.description.sponsorshipgrant No.SGS20/164/OHK3/3T/13, SGS21/116/OHK3/2T/13en
dc.format4 s.cs
dc.format.mimetypeapplication/pdf
dc.identifier.citation2021 International Conference on Applied Electronics: Pilsen, 7th – 8th September 2021, Czech Republic, p. 163-167.en
dc.identifier.isbn978–80–261–0972–3 (Print)
dc.identifier.isbn978–80–261–0973–0 (Online)
dc.identifier.issn1803–7232 (Print)
dc.identifier.issn1805–9597 (Online)
dc.identifier.urihttp://hdl.handle.net/11025/45586
dc.language.isoenen
dc.publisherUniversity of West Bohemiaen
dc.rights© University of West Bohemia, 2021en
dc.rights.accessopenAccessen
dc.subjectkolaps prouducs
dc.subjecttřífázový invertorcs
dc.subjectGaNcs
dc.subjectnitrid galliacs
dc.subject.translatedGaNen
dc.subject.translatedgallium nitrideen
dc.subject.translatedcurrent collapseen
dc.subject.translatedthree phaseinverteren
dc.titleGaN Based Inverter Current-Collapse Behavior with Switching Frequency and Blocking Voltageen
dc.typekonferenční příspěvekcs
dc.typeconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen

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